SHINKO ELECTRIC INDUSTRIES CO., LTD. Received Outstanding Session Paper at ECTC 2025

SHINKO ELECTRIC INDUSTRIES CO., LTD. ("the Company") hereby announces that our presentation at the world’s largest semiconductor packaging technology conference, the 2025 IEEE 75th Electronic Components and Technology Conference (ECTC 2025), held in Dallas, Texas, U.S.A., was awarded the “Outstanding Session Paper” as part of the ECTC 2025 Best Paper Awards, and the award ceremony was held at ECTC 2026 in Orlando, Florida, U.S.A. on May 27 this year.
The “Outstanding Session Paper” is awarded to particularly outstanding research results presented in technical papers among the 36 technical oral sessions (general sessions) at ECTC 2025. This honor reflects the high recognition of our research on glass core substrates. We identified internal glass cracking (SeWaRe) during dicing as being caused by the difference in the coefficient of thermal expansion (CTE) between the glass core and the build-up resin layers, and, in this award, demonstrated high electrical connection reliability through reliability testing.

Title of Conference Presentation

Development of Glass Core Build-up Substrate with TGV

Abstract for a Conference Presentation

In recent years, with the advancement of high-end servers and AI, semiconductor chips are becoming increasingly larger and more sophisticated. As a result, chiplet and heterogeneous integration technologies are attracting growing attention, creating strong demand for high-performance substrates that support large-scale semiconductor packages. To address these market needs, the Company has been developing next-generation build-up substrates using a glass core.
In this development, the glass core substrate demonstrated superior dimensional stability compared to conventional organic core substrates. Specifically, variation in the positional accuracy of the alignment mark on the outermost side was reduced by approximately 35%, and warpage was suppressed to less than half. Furthermore, regarding the issue of glass internal cracking (SeWaRe) during dicing of the glass core substrate, the root cause was identified as the mismatch in the coefficient of thermal expansion (CTE) between the glass core and the build-up resin layers. By applying an edge-coating technology to reduce stress, it was confirmed that the occurrence of SeWaRe can be suppressed even after a reflow test at 260°C.　In addition, in prototype substrates equipped with Through Glass Vias (TGVs), no delamination or cracking was observed at the interfaces between copper-filled TGVs and the redistribution layer (RDL). Reliability testing further confirmed that resistance fluctuation of the TGV daisy chain remained within ±10% of the initial value, demonstrating excellent electrical connection reliability.

Award Recipients

Masahiro Sunohara 
Jun Yoshiike
Hiroshi Taneda
Yoko Nakabayashi
Noriyoshi Shimizu
Process Development Dept., Research & Development Div. 
Shinko Electric Industries Co., Ltd.